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Detector Development Laboratory

Ion Implantation

Ion Implantation
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Ion implantation introduces high-purity dopants into semiconductor wafers at controlled concentrations and depths. The computer-controlled Eaton NV-1002 implants wafers with ion doses ranging from 1011 to 1016 ions/cm2. Wafers from 100 mm to 200 mm in diameter can be processed in batches of 25. Process repeatability is 99.5%.

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– Ion Implantation
+ Thin Implantation
+ Plasma Etching
+ Wet Chemistry
+ Annealing
+ Photolithography
+ Safety

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